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Experimental evidence of electron capture and emission from trap levels in Cz silicon

: Heinz, F.D.; Niewelt, T.; Schubert, M.C.


Physica status solidi. A 214 (2017), Nr.7, Art. 1700292, 5 S.
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Fraunhofer ISE ()

Up to now the existence of trap levels - defect levels in the forbidden band gap which temporary trap minority charge carriers - in Cz silicon was controversially discussed. We directly monitor the transient dynamics of the free electron density in the conduction band by the means of a time correlated single photon counting of photoluminescence. A variation of the experimental conditions reveals both a decrease of the electron density on a timescale of microseconds, which is not governed by recombination and an apparent generation of electrons on a scale of up to multiple seconds. We discuss that the transient dynamics may be excellently described by trap levels, providing strong evidence for their existence.