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Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET

: Albrecht, M.; Hürner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.


Zekentes, K.:
Silicon carbide and related materials 2016 : Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
Durnten-Zurich: TTP, 2017 (Materials Science Forum 897)
ISBN: 978-3-0357-1043-4
ISBN: 978-3-0357-3043-2
European Conference on Silicon Carbide and Related Materials (ECSCRM) <11, 2016, Halkidiki>
Fraunhofer IISB ()

In this work, the feasibility of the Bipolar-Injection Field Effect-Transistor (BIFET) [5] in two different Dual Thyristor type circuits [4] for an application as solid-state circuit breaker (SSCB) is experimentally verified. The Dual Thyristor type circuits are assembled from discrete silicon JFETs and a silicon carbide BIFET and are electrically characterized at various temperatures. The current-voltage characteristic shows the expected regenerative self-triggered turn-off capability under over-currents and the option to control the turn-off current by a passive resistor network. The issue with the adverse positive temperature coefficient of the trigger-current can be solved by putting the SiC BIFET in a cascode arrangement with a silicon Dual Thyristor. In this configuration the SiC BIFET provides the high voltage blocking capability and the silicon Dual Thyristor with its negative temperature coefficient controls the trigger-current. Transient analyses of both circuits indicate fast switching times of less than 50 μs seconds. It is demonstrated for the first time, that the SiC BIFET, due to its normally-on behaviour, used in a Dual Thyristor type circuit is a promising concept for self-triggered fuses in high current and high voltage applications.