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Novel advanced analytical design tool for 4H-SiC VDMOSFET devices

: Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A.


Zekentes, K.:
Silicon carbide and related materials 2016 : Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
Durnten-Zurich: TTP, 2017 (Materials Science Forum 897)
ISBN: 978-3-0357-1043-4
ISBN: 978-3-0357-3043-2
European Conference on Silicon Carbide and Related Materials (ECSCRM) <11, 2016, Halkidiki>
Fraunhofer IISB ()

An analytical tool to design 4H-SiC power vertical Double-diffused Metal-Oxide-Semiconductor Field-Effect-Transistor is proposed. The model optimizes, in terms of the doping concentration in the Drift–region, the trade–off between the ON–resistance, RON, and the maximum blocking voltage, VBL, that is the Drain-Source voltage for which the avalanche breakdown appears at the p+–well/n-DRIFT junction together with the breakdown of the Gate oxide. Finding such trade-off means to maximize, Figure-Of-Merit. Our results are based on a novel full–analytical model of the electric field in the Gate oxide, EOX, whose generality is ensured by the absence of fitting and empirical parameters. Model results are successfully compared with 2D–simulations covering a wide range of device performances.