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Switching SiC devices faster and more efficient using a DBC mounted terminal decoupling Si-RC element

: Matlok, S.; Erlbacher, T.; Krach, F.; Eckardt, B.


Zekentes, K.:
Silicon carbide and related materials 2016 : Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
Durnten-Zurich: TTP, 2017 (Materials Science Forum 897)
ISBN: 978-3-0357-1043-4
ISBN: 978-3-0357-3043-2
European Conference on Silicon Carbide and Related Materials (ECSCRM) <11, 2016, Halkidiki>
Fraunhofer IISB ()

Large power modules include several parallel mounted chips per switch to raise active area and current. By the electro-mechanical connection interface, the resulting large parasitic inductance is a huge problem especially for very fast switching SiC devices [1]. This challenge is handled by many approaches e.g. [2][3], but these recent developments require additional development effort along all aspects of the power module, e.g. smart DBC layout, low inductive top side metallization, special terminal designs or additional pins. In this paper we demonstrate an approach to enable excellent switching performance with conventional power module technologies: By using a recently developed monolithic silicon RC (Si-RC) element [4] to decouple the bus bar, this problem can be solved in a very efficient way. The Si-RC element is assembled directly adjacent to the power switches on the DBC. This allows a significant reduction of the SiC chip area by minimizing the power losses ca used by the switching transients from the parasitic DClink and module inductances.