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Correlation between mechanical material properties and stress in 3D-integrated silicon microstructures

 
: Stiebing, M.; Vogel, D.; Steller, W.; Wolf, M.J.; Zschenderlein, U.; Wunderle, B.

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Institute of Electrical and Electronics Engineers -IEEE-; Fraunhofer-Institut für Keramische Technologien und Systeme -IKTS-, Dresden:
18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2017 : 3-5 April 2017, Dresden
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-4344-6
ISBN: 978-1-5090-4343-9
ISBN: 978-1-5090-4345-3
S.225-230
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) <18, 2017, Dresden>
Englisch
Konferenzbeitrag
Fraunhofer ENAS ()
Fraunhofer IZM ()

Abstract
Three-dimensional (3D) electronic systems enable higher integration densities compared to their 2D counterparts, a gain required to meet the demands of future exa-scale computing, cloud computing, big data systems, cognitive computing, mobile devices and other emerging technologies. Through-silicon vias (TSVs) open a pathway to integrate electrical connections for signaling and power delivery through the silicon (Si) carrier used in 3D-stacked microstructures. As a limitation, TSVs induce locally thermomechanical stress in the Si lattice due to a mismatch in the coefficients of thermal expansion between Si and the TSV-filling metals and therefore enforce temperature related expansion and shrinkage during the annealing cycle. This temperature-induced crowding and relaxation of the Si lattice in proximity of the TSV (called 'keep-out-zone' forbidden for active device positioning) can cause a variety of issues ranging from stress-induced device performance degradation, interfacial delamination or interconnect failures due to cracking of the bond or even of the entire Si microstructures at stress hotspots upon assembly or operation. Additionally also the interconnect structures induce stress that will overlap with the TSV induced stress.

: http://publica.fraunhofer.de/dokumente/N-455877.html