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Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3

: Mart, Clemens; Zybell, Sabine; Riedel, Stefan; Czernohorsky, Malte; Seidel, Konrad; Weinreich, Wenke


Microelectronic engineering 178 (2017), S.254-257
ISSN: 0167-9317
Conference on Insulating Films on Semiconductors (INFOS) <20, 2017, Potsdam>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IPMS ()

ZrO2-based metal-insulator-metal (MIM) capacitors are manufactured using atomic layer deposition. The impact of aluminum doping at the electrode interface on the electrical characteristics is evaluated using I-V, C-V and time dependent dielectric breakdown measurements. The aluminum doping profiles are examined using ToF-SIMS. Further, the impact of electrical stress and temperature on the C-V characteristic is analyzed. Experimental results indicate that charge trapping at the electrode vicinity is responsible for capacitance degradation effects. The incorporation of aluminum has a positive effect on breakdown voltage, lifetime, capacitance stability, and suppresses the formation of hysteresis effects.