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Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3

: Mart, C.; Zybell, S.; Riedel, S.; Czernohorsky, M.; Seidel, K.; Weinreich, W.


Microelectronic engineering 178 (2017), S.254-257
ISSN: 0167-9317
Fraunhofer IPMS ()

ZrO2-based metal-insulator-metal (MIM) capacitors are manufactured using atomic layer deposition. The impact of aluminum doping at the electrode interface on the electrical characteristics is evaluated using I-V, C-V and time dependent dielectric breakdown measurements. The aluminum doping profiles are examined using ToF-SIMS. Further, the impact of electrical stress and temperature on the C-V characteristic is analyzed. Experimental results indicate that charge trapping at the electrode vicinity is responsible for capacitance degradation effects. The incorporation of aluminum has a positive effect on breakdown voltage, lifetime, capacitance stability, and suppresses the formation of hysteresis effects.