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First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power

 
: Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver

:

Shiroma, W. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2017 : 06-08 Juni 2017, Honolulu, Hawaii
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6360-4
ISBN: 978-1-5090-6361-1
S.35-37
International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride; high-electron-mobility transistor (HEMT); power amplifiers; tri-gate; W-band

Abstract
First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented in this paper. Superior device- and circuit-level performances over conventional GaN HEMTs are proven to be empowered through implementation of the novel Trigate topology which exhibits a 3-dimensional gate profile. The measurements of the fabricated MMIC yield up to 30.6 dBm (1.15 W) of output power in the frequency range of 86–94 GHz with 8% of power-added-efficiency (PAE) and more than 12 dB of transducer power gain. The achieved results demonstrate the promising potential of Tri-gate GaN technology towards high-performance millimeter-wave PA designs.

: http://publica.fraunhofer.de/dokumente/N-452483.html