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Title
VERFAHREN ZUR ABSCHEIDUNG VON AMORPHEN, WASSERSTOFFHALTIGEN SILIZIUMSCHICHTEN
Date Issued
2002
Author(s)
Szyszka, B.
Klages, C.
Jiang, X.
Jung, T.
Patent No
2000-10011857
Abstract
WO 200166815 A UPAB: 20011108 NOVELTY - Coating a substrate (1) with amorphous hydrogen-containing silicon layers (a-Si: H layers) (7) comprises introducing a sputtering gas and a reactive gas containing silicon or a silicon compound into a gas flow sputtering source (8) with a target that contains silicon. DETAILED DESCRIPTION - Preferred Features: A hollow cathode gas flow sputtering source is used as the gas flow sputtering source. The reactive gas is SiH4 or Si2H6, optionally mixed with additional reactive gas. A noble gas is introduced into the sputtering source as sputtering gas. USE - Used in the production of solar cells. ADVANTAGE - Good a-Si: H layers are produced in an in-line process.
Language
de
Patenprio
DE 2000-10011857 A: 20000310