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Demonstration of an RF front-end based on GaN HEMT technology

 
: Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

:

Carapezza, E.M. (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security, Defense, and Law Enforcement Applications XVI : Anaheim, California, United States, April 9, 2017
Bellingham, WA: SPIE, 2017 (Proceedings of SPIE 10184)
Paper 10184, 7 S.
Conference "Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security, Defense, and Law Enforcement Applications" <16, 2017, Anaheim/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
broadband jammer; counter-UAV; gallium nitride; high-electron mobility transistor (HEMT)

Abstract
The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (~3 m) which endorses the promising potential of the broadband jamming approach.

: http://publica.fraunhofer.de/dokumente/N-445795.html