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Investigation of GaN-HEMTs in reverse conduction

 
: Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver

MESAGO PCIM GmbH, Stuttgart:
PCIM Europe 2017, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings : Nuremberg, 16 - 18 May 2017
Berlin: VDE Verlag, 2017
ISBN: 978-3-8007-4424-4
S.533-540
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management <2017, Nuremberg>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
This work investigates the reverse conduction characteristics of 600 V-class GaN-HEMTs. The behavior of a conventional HEMT is analyzed and compared to the reverse conduction of an improved HEMT structure with integrated free-wheeling diode. The characteristics of both structures are measured on fabricated test samples. Furthermore, the electrical behavior is analyzed with regards to the intrinsic layouts.

: http://publica.fraunhofer.de/dokumente/N-445794.html