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Physically sound parameterization of incomplete ionization in aluminum-doped silicon

 
: Steinkemper, H.; Altermatt, P.P.; Hermle, M.

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AIP Advances 6 (2016), Nr.12, Art. 125202, 7 S.
ISSN: 2158-3226
Englisch
Zeitschriftenaufsatz
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen; silicon; simulation; ionization; solar cell

Abstract
Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p+ (Al-p+) regions. Aluminum has a rather deep state in the band gap compared to boron or phosphorus, causing strong incomplete ionization. In this paper, we considerably improve our recent parameterization [Steinkemper et al., J. Appl. Phys. 117, 074504 (2015)]. On the one hand, we found a fundamental criterion to further reduce the number of free parameters in our fitting procedure. And on the other hand, we address a mistake in the original publication of the incomplete ionization formalism in Altermatt et al., J. Appl. Phys. 100, 113715 (2006).

: http://publica.fraunhofer.de/dokumente/N-445190.html