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Light-induced degradation in multicrystalline silicon: The role of copper

: Inglese, A.; Focareta, A.; Schindler, F.; Schön, J.; Lindroos, J.; Schubert, M.C.; Savin, H.

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Energy Procedia 92 (2016), S.808-814
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <6, 2016, Chambéry>
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain quality were found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.