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Advanced photomask fabrication by e-beam lithography for mask aligner applications

: Weichelt, T.; Bourgin, Y.; Banasch, M.; Zeitner, U.D.


Behringer, Uwe ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
32nd European Mask and Lithography Conference 2016 : 21-22 June 2016, Dresden, Germany
Bellingham, WA: SPIE, 2016 (Proceedings of SPIE 10032)
ISBN: 978-1-5106-0488-9
ISBN: 978-1-5106-0487-2
Paper 1003204
European Mask and Lithography Conference <32, 2016, Dresden>
Fraunhofer IOF ()

Photomasks contain geometric information that will be transferred to substrates or pre-structured surfaces. Conventional mask aligner lithography in the sense of shadow printing of the photomask suffers from limited achievable resolution. Photomask and substrate are typically separated by an air gap causing diffraction effects and hence affecting the minimum structure size. Even though contact lithography offers a resolution in the wavelengthscale, yield problems and contamination of the photomask are its drawbacks. Using proximity lithography, these problems can be avoided since it profits from a contact-free exposure process. To overcome the resolution limitation of the shadow printing mode more advanced diffraction based photo masks need to be used.