Publica
Hier finden Sie wissenschaftliche Publikationen aus den FraunhoferInstituten. Application of GaN power transistors in a 2.5 MHz LLC DC/DC converter for compact and efficient power conversion
 Institute of Electrical and Electronics Engineers IEEE: EPE 2016, ECCE Europe, 18th European Conference on Power Electronics and Applications : Karlsruhe, Germany, 5 9 September, 2016, USBStick Piscataway, NJ: IEEE, 2016 ISBN: 9789075815252 ISBN: 9789075815245 ISBN: 9781509014101 7 S. 
 European Conference on Power Electronics and Applications (EPE) <18, 2016, Karlsruhe> 

 Englisch 
 Konferenzbeitrag 
 Fraunhofer ISE () 
Abstract
In this work a demonstrator with a switching frequency up to 2.5 MHz is shown. These comparatively high frequencies reduce the weight and the system costs of the resonant 3kWDCDCconverter. The electrical properties of the implemented Gallium Nitride (GaN) power transistors enable high switching frequencies while maintaining high efficiency. The presented converter has a power density of approximately 3 W/cm3. The total efficiency of the converter is higher than 90 % for all operation points above 1/5 of the nominal load. Exceptionally high efficiency of 94.5 % can be reached at half of the nominal load and a switching frequency of 2 MHz. Possible improvements are defined and could be reached by adding a continuous dead time control as well as adapting the driver circuit of the synchronous rectification.