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Analysis of grain structure evolution via image processing based on optical measurements of mc Si wafers

 
: Strauch, T.; Demant, M.; Krenckel, P.; Riepe, S.; Rein, S.

:
Postprint urn:nbn:de:0011-n-4448979 (938 KByte PDF)
MD5 Fingerprint: 787e312ae5ba097ed25b7897e2428427
Erstellt am: 18.8.2017


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 : 5-10 June 2016, Portland, Or.
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-2724-8 (Electronic)
ISBN: 978-1-5090-2725-5 (Print on Demand)
S.1297-1302
Photovoltaic Specialists Conference (PVSC) <43, 2016, Portland/Or.>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; characterization; processing; silicon; growth

Abstract
A fast and thorough characterization of grain structure in multicrystalline silicon (mc-Si) is crucial to improve crystal growth and thus bulk lifetime in solar cells. The presented characterization techniques are based on simple optical measurements on as-cut mc-Si wafers. An insight into the entire brick is gained by connecting 2D-information, computed via advanced pattern recognition techniques, over brick height. We identify robust statistical key parameters. Their development within typical bricks of different cast-Si techniques is compared and it is found that the distinct behavior of different materials in the lower part of the brick subsides towards the brick top where grain size distribution is similar.

: http://publica.fraunhofer.de/dokumente/N-444897.html