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Structure and thermoelectric properties of PbTe films deposited by thermal evaporation method

: Nguyen, M.P.; Froemel, J.; Hatayama, S.; Sutou, Y.; Koike, J.; Tanaka, S.; Esashi, M.; Gessner, T.


Institute of Electrical and Electronics Engineers -IEEE-; Institute of Electrical and Electronics Engineers -IEEE-, Nanotechnology Council:
IEEE NANO 2016, 16th International Conference on Nanotechnology : August 22-25, 2016, Sendai, Japan
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1493-4
ISBN: 978-1-5090-1494-1
ISBN: 978-1-5090-3914-2
International Conference on Nanotechnology (NANO) <16, 2016, Sendai>
Fraunhofer ENAS ()

Lead telluride (PbTe) thin films have been deposited on SiO2 substrate using thermal evaporation method. The structure of the films was found to have a face-centered cubic (fcc) with predominant grain growth in the (200) direction for both as-deposited and annealed samples up to 350 °C in vacuum for 1 h. The in-plain electrical resistivity and Hall measurements via van der Pauw method as a function of annealed temperatures were measured. It was found that increasing the annealing temperature led to increase in grain size, which in turn caused decrease of electrical resistivity and increase of Seebeck coefficient. The high power factor of 141.0 μWm-1K-2 was obtained for the annealed samples at 350 °C in vacuum for 1 h.