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Fe doped InGaAs for the generation and detection of pulsed THz radiation

 
: Kohlhaas, R.B.; Globisch, B.; Dietz, R.J.B.; Göbel, T.; Schell, M.

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Institute of Electrical and Electronics Engineers -IEEE-:
41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016 : 25-30 September 2016, Copenhagen, Denmark
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-4673-8485-8 (Electronic)
ISBN: 978-1-4673-8486-5 (Print on Demand)
S.833-834
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) <41, 2016, Copenhagen>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
This paper presents the analysis of Fe doped InGaAs grown by molecular beam epitaxy (MBE) utilized in photoconductive antennas (PCAs) for the optical generation and detection of pulsed THz radiation at 1.55 μm wavelength. InGaAs: Fe shows very favorable characteristics for the application as THz antennas due to its large resistivity of ~2000 Ω·cm and mobility of almost 1000 cm2/V·s, while still exhibiting ultrafast carrier trapping below 1 ps. This is confirmed by measured THz spectra which show a bandwidth of greater than 6 THz and up to 95 dB dynamic range.

: http://publica.fraunhofer.de/dokumente/N-444867.html