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HERSTELLUNG VON MG2-SI UND TERNAERER VERBINDUNGEN MG2 (SI,E); (E=GE, SN, PB SOWIE UEBERGANGSMETALLE; KLEINER ALS 10 GEW.%) AUS MGH2 UND SILIZIUM SOWIE VON MAGNESIUMSILICIDFORMKOERPERN MITTELS PULS-PLASMA-SYNTHESE

Production of magnesium silicide compounds useful for making low-density building materials comprises reacting magnesium hydride with silicon.
 
: Schmidt, M.; Schmidt, J.; Grin, Y.; Boehm, A.; Kieback, B.; Scholl, R.; Schubert, T.; Weissgaerber, T.; Zumdick, M.

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DE 2001-10117924 A: 20010410
EP 2002-737934 AW: 20020409
WO 2002-EP3953 A: 20020409
EP 1409407 A1: 20040421
C01B0033
Deutsch
Patent, Elektronische Publikation
Fraunhofer IFAM ()

Abstract
DE 10117924 A UPAB: 20030121 NOVELTY - Production of magnesium silicide compounds (I) comprises reacting magnesium hydride (MgH2) and optionally one or more alkali, alkaline earth and/or rare earth metals and/or their hydrides with silicon and optionally germanium, tin, lead and/or transition metals. DETAILED DESCRIPTION - Production of magnesium silicide compounds of formula Mg(2-y)MzSi(1-x)Ex (I) comprises reacting MgH2 and optionally one or more alkali, alkaline earth and/or rare earth metals and/or their hydrides with silicon and optionally germanium, tin, lead and/or transition metals: M = one or more alkali, alkaline earth and/or rare earth metals; E = Ge, Sn, Pb and/or transition metals; x = 0-0.1; y = 0-0.2; z = 0-0.4. INDEPENDENT CLAIMS are included for: (1) a process for producing (I) comprising reacting MgH2 and optionally a M-containing compound with a silicon compound and optionally an E-containing compound by means of pulsed plasma synthesis; (2) a hybrid material comprising (I); and (3) a shaped product produced as above. USE - The products, especially magnesium silicide (Mg2Si), are useful for making low-density building materials for exposure to moderate thermal and/or mechanical stresses. ADVANTAGE - The process gives high-purity products without the oxide contamination associated with silicides made from magnesium metal.

: http://publica.fraunhofer.de/dokumente/N-44130.html