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Reactive deposition of Al-doped ZnO thin films using high power pulsed magnetron sputtering (HPPMS)

: Ruske, F.; Pflug, A.; Sittinger, V.; Werner, W.; Szyszka, B.; Christie, D.J.

Aegerter, M.A.; Kirchhoff, V. ; Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik -FEP-, Dresden:
Advanced Coatings for Large-Area or High-Volume Products. Proceedings of the 6th International Conference on Coatings on Glass and Plastics : June 18-22, 2006, Dresden, Germany
Dresden, 2006
International Conference on Coatings on Glass and Plastics (ICCG) <6, 2006, Dresden>
Fraunhofer IST ()
HPPMS; process control; Al-doped ZnO

High power pulsed magnetron sputtering has been used for depositing Al-doped ZnO films from metallic targets in a reactive process. A new type of process control has been developed in order to stabilize the discharge in the transition region. It has been shown that the process can be stabilized for all operating points at high peak power densities. The discharge characteristics like peak power density and plasma impedance have been analyzed. Films have been deposited at room temperature and 200 °C and resistivities below 400 µOcm have been obtained.