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4.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density

: Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton


Zekentes, K.:
Silicon carbide and related materials 2016 : Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
Durnten-Zurich: TTP, 2017 (Materials Science Forum 897)
ISBN: 978-3-0357-1043-4
ISBN: 978-3-0357-3043-2
European Conference on Silicon Carbide and Related Materials (ECSCRM) <11, 2016, Halkidiki>
Fraunhofer IISB ()
Junction Barrier Schottky (JBS) Diode; DBC-Mounted; Floating Field Rings; 4H-SiC; Leistungselektronik

High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have been fabricated. They achieved a forward current of 5 A at a forward voltage drop of 1.8 V and 20 A at 4.2 V. A low reverse leakage current of 0.3 μA at 1.2 kV and 37 μA at 3.3 kV was measured. The chip size was 7.3 mm x 7.3 mm, the active area 0.25 cm2 and the diode was able to handle a repetitive pulse current density of over 300 A/cm2 without degradation. Floating field rings in combination with a field-stop ring were used as edge termination to reach 73% of the theoretical breakdown voltage. The epitaxial layer was 32 μm thick, with a nitrogen doping concentration of 1x1015 cm-3. The JBS diodes have been manufactured in a 100 mm SiC prototyping line, using well established processing technology, to achieve cost-efficient devices.