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Ar-H2 plasma surface treatments of silicon wafers at atmospheric pressure

: Hergelová, B.; Eichler, M.; Nagel, K.; Klages, C.-P.

Černák, Mirko (Ed.):
HAKONE XV, International Symposium on High Pressure Low Temperature Plasma Chemistry 2016 : With joint COST TD1208 workshop Non-Equilibrium Plasmas with Liquids for Water and Surface Treatment; Book of Contributed Papers; 11th - 16th September 2016, Brno, Czech Republic
Brno: Masaryk University Brno, 2016
ISBN: 978-80-210-8318-9
International Symposium on High Pressure Low Temperature Plasma Chemistry (HAKONE) <15, 2016, Brno>
Fraunhofer IST ()
silicon wafer; dielectric barrier discharge; direct and post-dischrage treatment; hydrogen containing plasma; Si-H bond formation

We investigated the effects of exposing silicon wafer surfaces to direct or afterglow Ar-H2 plasmas of atmospheric-pressure volume dielectric barrier discharges. Direct plasma treatment introduced Si-H but also Si-O functionalities, which were stable in time. Afterglow H atom treatment did not introduce Si-H functionalities, neither in combination with UV radiation from a separate Ar DBD source, but the UV radiation was able to oxidize the surface. Direct and also afterglow plasma treatment on the other hand removed the Si-H functionalities created be HF dipping, that means H atom recombination takes place leaving behind reactive radicals.