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2016
Conference Paper
Titel
Ar-H2 plasma surface treatments of silicon wafers at atmospheric pressure
Abstract
We investigated the effects of exposing silicon wafer surfaces to direct or afterglow Ar-H2 plasmas of atmospheric-pressure volume dielectric barrier discharges. Direct plasma treatment introduced Si-H but also Si-O functionalities, which were stable in time. Afterglow H atom treatment did not introduce Si-H functionalities, neither in combination with UV radiation from a separate Ar DBD source, but the UV radiation was able to oxidize the surface. Direct and also afterglow plasma treatment on the other hand removed the Si-H functionalities created be HF dipping, that means H atom recombination takes place leaving behind reactive radicals.