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A two-input 8-transistor SRAM cell with enhanced noise immunity

 
: Korotkov, Alexander; Morozov, Dmitry; Hauer, Johann

:

Institute of Electrical and Electronics Engineers -IEEE-; Institute of Electrical and Electronics Engineers -IEEE-, Romania Section:
International Symposium on Fundamentals of Electrical Engineering, ISFEE 2016 : University Politehnica of Bucharest, Romania, June 30-July 2, 2016
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-4673-9575-5
ISBN: 978-1-4673-9574-8
ISBN: 978-1-4673-9576-2
4 S.
International Symposium on Fundamentals of Electrical Engineering (ISFEE) <2016, Bucharest>
Englisch
Konferenzbeitrag
Fraunhofer IIS ()
Speicher

Abstract
The paper presents eight transistors SRAM cell with improved noise (interferences) immunity. The effect is reached by use an additional bus to control the state of the cell trigger. The results of the simulations as well as experiments have been demonstrated. The following SRAM characteristics have been obtained SNM = 222 mV, WRM = 1017 mV, the cell discharge current is 114 uA. The test chip has been fabricated with parameters of 180 nm CMOS process of UMC.

: http://publica.fraunhofer.de/dokumente/N-438142.html