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Epitaxial N-type silicon solar cells with 20% efficiency

 
: Milenkovic, N.; Drießen, M.; Steinhauser, B.; Benick, J.; Lindekugel, S.; Hermle, M.; Janz, S.; Reber, S.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 : 5-10 June 2016, Portland, Or.
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-2724-8 (Electronic)
ISBN: 978-1-5090-2725-5 (Print on Demand)
S.58-61
Photovoltaic Specialists Conference (PVSC) <43, 2016, Portland/Or.>
Englisch
Konferenzbeitrag
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Photovoltaik; Silicium-Photovoltaik; Epitaxie; Si-Folien und SiC-Abscheidungen; EpiWafer; high efficiency; n-type

Abstract
Silicon wafers have still a significant contribution to the total cost of production for silicon solar cells. One cost driver when using classical wafering techniques is kerf loss. With the approach using porous silicon as a detachment layer and as a seed layer for epitaxy kerf losses can be avoided. In this work, solar cells with epitaxially grown n-type wafers are presented. The best EpiWafer-cell reaches an open circuit voltage of 657.5mV, a short circuit current of 39.6mA/cm2and a fill factor of 77%. The resulting energy conversion efficiency of 20% proves the high quality of this material.

: http://publica.fraunhofer.de/dokumente/N-435568.html