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Investigating subsurface damages in semiconductor-insulator-semiconductor solar cells with THz spectroscopy

: Blumröder, U.; Hempel, H.; Füchsel, K.; Hoyer, P.; Bingel, A.; Eichberger, R.; Unold, T.; Nolte, S.


Physica status solidi. A 214 (2017), Nr.5, Art. 1600590, 8 S.
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Fraunhofer IOF ()

The influence of near-surface crystal damage on carrier dynamics in silicon has been investigated with optical-pump THz-probe and THz emission studies. The surface damage is caused by a plasma process used for the fabrication of the ultrathin insulator within semiconductor-insulator-semiconductor (SIS) solar cells. The ion bombardment during the plasma process introduces a highly damaged subsurface region. Furthermore, the integration of positive interface charges leads to the formation of a depletion region that can be detected via the emitted THz radiation. The results are compared with classic I-U-characterization demonstrating that THz spectroscopy can be used as a supplementary tool for the investigation of process-induced surface damages.