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Characterization of high-voltage-sic-devices with 15 kV blocking voltage

: Thoma, J.; Kolb, S.; Salzmann, C.; Kranzer, D.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Industrial Electronics Society -IES-; IEEE Industry Applications Society:
IEEE International Power Electronics and Motion Control Conference, PEMC 2016. Proceedings : Festival and Congress Centre Varna, Varna, Bulgaria, 25-28 September, 2016
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1798-0
ISBN: 978-1-5090-1797-3
ISBN: 978-1-5090-1799-7
International Power Electronics and Motion Control Conference (PEMC) <17, 2016, Varna>
Fraunhofer ISE ()

This paper presents component characteristics of various 15 kV High-Voltage-SiC-devices for future medium voltage power electronics. Switching and conduction behaviour of an IGBT, a MOSFET, its intrinsic diode and a JBS-diode have been determined. Therefore a test bench was built up, which enabels switching measurements up to 20 kV and 300 A. For switching the devices at high and fastly changing electrical potentials, a highly isolating gate driver power supply was developed. The measurement results show very low losses compared to silicon devices but also very high voltage slew rates. The low losses and the much higher possible blocking voltages of SiC-devices will allow it to built medium voltage power electronic converters with switching frequencies above 10 kHz and with a direct connection to the medium voltage distribution grid.