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Photoconductive antennas based on low temperature grown GaAs on silicon infstrates for broadband terahertz generation and detection

: Klos, Matthias; Bartholdt, Richard; Klier, Jens; Lampin, Jean François; Beigang, René


Sadwick, L.P. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX : 15-18 February 2016, San Francisco, California, United States
Bellingham, WA: SPIE, 2016 (Proceedings of SPIE 9747)
ISBN: 978-1-62841-982-5
Art. 974712
Conference "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications" <9, 2016, San Francisco/Calif.>
Fraunhofer IPM ()
Terahertz Waves; Antennas; Gallium Arsenide; Photoconductivity; Submillimeter Waves

We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT GaAs) on silicon infstrates for terahertz (THz) generation and detection. The PCAs consist of 2 μm thick layers of LT GaAs grown on a high resistivity silicon infstrate in order to reduce the intrinsic absorption losses around 8 THz due to a strong phonon resonance in GaAs. Using 20 fs long pump pulses around 800 nm and dipole antennas with dipole lengths between 20 μm and 60 μm a maximum bandwidth up to 12 THz and a maximum dynamic range exceeding 90 dB at 0.5 THz were obtained. The average output power was measured with a calibrated detector to be 95 μW at a repetition rate of 80 MHz.