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Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)

Reduzierung der Leitendverluste für Bipolar Injection Feldeffekttransistoren (BIFET)
: Hürner, Andreas; Mitlehner, Heinz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar


Roccaforte, F.:
Silicon Carbide and Related Materials 2015 : Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Dürnten: Trans Tech Publications, 2016 (Materials Science Forum 858)
ISBN: 978-3-0357-1042-7 (Print)
ISBN: 978-3-0357-2042-6 (CD-ROM)
ISBN: 978-3-0357-3042-5 (eBook)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <16, 2015, Giardini Naxos>
Fraunhofer IISB ()
BIFET; Bipolar; high-voltage; solid-state-circuit breaker; electric circuit breakers; semiconductor junctions; silicon carbide; bipolar injection; doping concentration; temperature range; turn-off voltage

In this study, the potential of forward conduction loss reduction of Bipolar-Injection Field-Effect-Transistors (SiC-p-BIFET) with an intended blocking voltage of 10kV by adjusting the doping concentration in the channel-region is analyzed. For the optimization of the SiC-p-BIFET, numerical simulations were carried out. Regarding a desired turn-off voltage of approximately 25V, the optimum doping concentration in the channel-region was found to be 1.4x1017cm-3. Based on these results, SiC-p-BIFETs were fabricated and electrically characterized in the temperature range from 25°C up to 175°C. In this study, the differential on-resistance was found to be 110mΩcm2 for a temperature of 25°C and 55mΩcm2 for a temperature of 175°C. In comparison to our former results, a reduction of the differential on-resistance of about 310mΩcm2 at room temperature is demonstrated.