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  4. Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
 
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2016
Conference Paper
Title

Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs

Other Title
Potenzial von 4H-SiC CMOS für Hochtemperaturanwendungen mittels verbesserter lateraler p-MOSFETs
Abstract
In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 mm, 10 mm, 5 mm, and 3 mm) and doping concentrations (ND= 1015cm-3and 8·1015cm-3) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n- MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value of the threshold voltage increases with increasing doping concentration [3]. To investigate its suitability for CMOS applications, inverters with different doping concentrations for n- MOSFET (NA= 1015cm-3and 1017cm-3) und p- MOSFET (ND= 1015cm-3and 8·1015cm-3) were built. For logic levels of 0 V and 10 V, the voltage transfer characteristic with the highest input range was obtained for a low p-MOSFET and a high n- MOSFET doping concentration. The lowest propagation delay time could be achieved with a low p- MOSFET and a low n-MOSFET doping concentration. For temperatures up to 300 °C the drain current of p-MOSFETs with channel lengths below 3 mm is hampered by the series resistance of the source and drain region which limits the high-frequency performance of CMOS devices.
Author(s)
Albrecht, Matthäus
Universität Erlangen-Nürnberg
Erlbacher, Tobias  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Bauer, A.J.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Frey, Lothar
Universität Erlangen-Nürnberg
Mainwork
Silicon Carbide and Related Materials 2015  
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2015  
DOI
10.4028/www.scientific.net/MSF.858.821
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • 4H-SiC

  • CMOS

  • field-effect mobility

  • high temperature

  • p-MOSFET

  • cmos integrated circuits

  • drain current

  • electric resistance

  • high temperature applications

  • silicon carbide

  • threshold voltage

  • doping concentration

  • high frequency performance

  • propagation delay time

  • transfer characteristics

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