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Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs

Potenzial von 4H-SiC CMOS für Hochtemperaturanwendungen mittels verbesserter lateraler p-MOSFETs
: Albrecht, Matthäus; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar


Roccaforte, F.:
Silicon Carbide and Related Materials 2015 : Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Dürnten: Trans Tech Publications, 2016 (Materials Science Forum 858)
ISBN: 978-3-0357-1042-7 (Print)
ISBN: 978-3-0357-2042-6 (CD-ROM)
ISBN: 978-3-0357-3042-5 (eBook)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <16, 2015, Giardini Naxos>
Fraunhofer IISB ()
4H-SiC; CMOS; field-effect mobility; high temperature; p-MOSFET; cmos integrated circuits; drain current; electric resistance; high temperature applications; silicon carbide; threshold voltage; doping concentration; high frequency performance; propagation delay time; transfer characteristics

In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 μm, 10 μm, 5 μm, and 3 μm) and doping concentrations (ND= 1015cm-3and 8·1015cm-3) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n- MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value of the threshold voltage increases with increasing doping concentration [3]. To investigate its suitability for CMOS applications, inverters with different doping concentrations for n- MOSFET (NA= 1015cm-3and 1017cm-3) und p- MOSFET (ND= 1015cm-3and 8·1015cm-3) were built. For logic levels of 0 V and 10 V, the voltage transfer characteristic with the highest input range was obtained for a low p-MOSFET and a high n- MOSFET doping concentration. The lowest propagation delay time could be achieved with a low p- MOSFET and a low n-MOSFET doping concentration. For temperatures up to 300 °C the drain current of p-MOSFETs with channel lengths below 3 μm is hampered by the series resistance of the source and drain region which limits the high-frequency performance of CMOS devices.