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Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs

: Unger, C.; Mocanu, M.; Pfost, M.; Waltereit, P.; Reiner, R.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
International Semiconductor Conference, CAS 2016. Proceedings : October 10-12, 2016, Sinaia, Romania
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1208-4 (Print)
ISBN: 978-1-5090-1207-7 (Online)
International Semiconductor Conference (CAS) <39, 2016, Sinaia>
Fraunhofer IAF ()
AlGaN/GaN; HEMT; gate leakage; high temperature; hot spot; defect mechanism; Thermal simulation; temperature sensor; meander; pulsed measurements

This work investigates the electro-thermal behavior and failure mechanism of a 600V depletion-mode GaN HEMT by experimental analysis and numerical thermal simulations. For this device, the positive temperature coefficient of the draingate leakage current can lead to the formation of hot spots. This localized thermal runaway which ultimately results in a breakdown of the inherent drain-gate junction is found to be the dominant cause of failure.