Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes

Trade-off zwischen Nennstromdichte und Stoßstromfestigkeit in 4.5kV SiC MPS Dioden
 
: Huang, Yaren; Erlbacher, Tobias; Buettner, Jonas; Wachutka, Gerhard

:

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
28th International Symposium on Power Semiconductor Devices & ICs, ISPSD 2016. Proceedings : June 12-16, 2016; Prague, Czech Republic
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-4673-8771-2 (Print)
ISBN: 978-1-4673-8770-5 (Online)
ISBN: 978-1-4673-8769-9 (USB)
ISBN: 978-1-4673-8768-2
S.63-66
International Symposium on Power Semiconductor Devices and ICs (ISPSD) <28, 2016, Prague>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()

Abstract
There is a trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. This paper explains the physical mechanisms underlying this trade-off and identifies the relevant design parameters. The dependencies of this trade-off on the layout parameters and physical parameters are described by analytical relations (compact model). An equivalent lumped element circuit is set up for an intuitive interpretation of the functional components of a SiC MPS diode. Eventually, we investigate several novel device structures with a view to improving the forward characteristics under regular and overcurrent operating conditions.

: http://publica.fraunhofer.de/dokumente/N-431731.html