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2016
Conference Paper
Titel
Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Abstract
This paper presents switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaNon- Si technology. The integrated power chip includes two high performance GaN-HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4x4 mm². Operation of the half-bridge chip is demonstrated in a soft-switching buck converter at switching frequencies up to 3 MHz, input voltages up to 400 V, and output power up to 250 W.
Author(s)