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Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip

: Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Power Electronics Society; IEEE Electron Devices Society:
4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 : Fayetteville, Arkansas, USA; November 7-9, 2016
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1576-4
ISBN: 978-1-5090-1575-7
ISBN: 978-1-5090-1577-1
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <4, 2016, Fayetteville/Arkansas>
Fraunhofer IAF ()
monolithic integration; wide bandgap; AlGaN/GaN-on-Si; HEMT; half-bridge; high voltage; reverse diode; high frequency; power IC; substrate bias; current collapse

This paper presents switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaNon- Si technology. The integrated power chip includes two high performance GaN-HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4x4 mm². Operation of the half-bridge chip is demonstrated in a soft-switching buck converter at switching frequencies up to 3 MHz, input voltages up to 400 V, and output power up to 250 W.