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Performance of tri-gate AlGaN/GaN HEMTs

: Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.


Ionescu, A.M. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
46th European Solid State Device Research Confernce, ESSDERC 2016 : 12-15 September 2016, Lausanne, Switzerland
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-2969-3
ISBN: 978-1-5090-2970-9
European Solid-State Device Research Conference (ESSDERC) <46, 2016, Lausanne>
Fraunhofer IAF ()
component; gallium nitride; HEMT; tri-gate; device simulation

The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs). Furthermore, it is shown from our simulations that tri-gate AlGaN/GaN HEMTs can exhibit higher breakdown voltages and operate closer to the theoretical limit for GaN devices than their planar counterpart. Moreover, the RF performance of tri-gate HEMTs with optimized body design can be superior to that of conventional planar devices.