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High voltage GaN-based Schottky diodes in non-isolated LED buck converters

 
: Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-:
EPE 2016, ECCE Europe, 18th European Conference on Power Electronics and Applications : Karlsruhe, Germany, 5 -9 September, 2016, USB-Stick
Piscataway, NJ: IEEE, 2016
ISBN: 978-90-75815-25-2
ISBN: 978-9-0758-1524-5
ISBN: 978-1-5090-1410-1
9 S.
European Conference on Power Electronics and Applications (EPE) <18, 2016, Karlsruhe>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride (GaN); wide bandgap devices; fast recovery diode; Free Wheel Diode (FWD); switched-mode power supply; LED; solid state lighting

Abstract
This work demonstrates the suitability of AlGaN/GaN-on-Si Schottky diodes in a non-isolated buck converter for LED applications. To the authors’ knowledge, this is the first time that AlGaN/GaN-on-Si Schottky diodes have been employed as flyback diodes in a non-isolated buck converter. First the diodes are specifically developed and characterized. Afterwards the diodes are tested in an advanced non-isolated buck converter for LED modules. The circuit is characterized and the approach is discussed and compared to state-of-the-art solutions.

: http://publica.fraunhofer.de/dokumente/N-423720.html