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2016
Conference Paper
Titel
Carbon-hydrogen complexes in n- and p-type SiGe-alloys studied by Laplace deep level transient spectroscopy
Abstract
A deep level transient spectroscopy (DLTS) study on n- and p-type diluted Si1-xGexalloys (x=0, 0.011, 0.026, 0.046, and 0.070) is presented. Defect levels of several carbon-hydrogen(CH) complexes are observed. The high-resolution Laplace-DLTS technique allows us to detect configurations of defects which contain different numbers of Ge atoms in the first and second nearest neighbourhood of the CH complexes. The electrical properties of the defects will be analysed and their origin will be discussed.
Author(s)