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GaSb-based 2.0 µm SDL with 17 W output power at 20°C

: Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Wagner, J.

DOI: 10.1049/el.2016.2412

	Electronics Letters 52 (2016), Nr.21, S.1794-1795 ISSN: 0013-5194

	Englisch
	Zeitschriftenaufsatz
	Fraunhofer IAF ()

Abstract
A gallium antimonide-based semiconductor disk laser (SDL) emitting 17 W of continuous wave output power at a heat sink temperature of 20°C and an emission wavelength of 2.02 µm are presented. This high-output power is achieved by optimising the thermal management and reducing the quantum deficit of the SDL structure.

: http://publica.fraunhofer.de/dokumente/N-423590.html