Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-Band

: Friesicke, C.; Maier, T.; Brueckner, P.; Quay, R.; Ambacher, O.


European Microwave Association:
46th European Microwave Conference, EuMC 2016. Proceedings : 4-6 October 2016, London, UK, European Microwave Week (EuMW) 2016
London: Horizon House, 2016
ISBN: 978-2-87487-043-9
European Microwave Conference (EuMC) <46, 2016, London>
European Microwave Week (EuMW) <19, 2016, London>
Fraunhofer IAF ()

This paper describes the performance of packaged power bars that are realized in a 0.5 µm gate length AlGaN/GaN HEMT technology on SiC substrates, assembled together with pre-matching circuitry in a ceramic package and designed for operation at 1030MHz (L-Band). Two different package assemblies are compared: The first one uses a single power bar, and the second one uses four parallel power bars. Fundamental passive load-pull at 50V DC drain supply voltage under pulsed excitation with 10% duty cycle shows output power levels of 260W and 900W at 3 dB compression with an associated PAE of 62% and 66%, respectively, for the first and second assembly. The first assembly is further characterized using an active harmonic loadpull system, which demonstrates an increased output power of about 325W at 69% PAE when tuned for maximum power, or peak PAE values exceeding 75% at an output power of 260W when tuned for maximum efficiency.