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Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length

: Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.

European Microwave Association:
11th European Microwave Integrated Circuits Conference, EuMIC 2016. Proceedings : European Microwave Week (EuMW) 2016, 3-4 Oct 2016, London, UK
London: Horizon House, 2016
ISBN: 978-2-87487-044-6
European Microwave Integrated Circuits Conference (EuMIC) <11, 2016, London>
European Microwave Week (EuMW) <19, 2016, London>
Fraunhofer IAF ()
Enhancement mode (E-mode); fin-shaped field-effect transistor (FinFET); gallium nitride; high-electron mobility transistor (HEMT)

This paper reports on the design and fabrication of enhancement-mode high-electron mobility transistors (HEMTs) in AlGaN/GaN FinFET technology with 100 nm of gate length (Lg = 100 nm). Provided by the lateral as well as the vertical modulation of the fin-shaped channels, the threshold voltages of the designed transistors are made possible to be shifted toward the positive direction, enabling the enhancement-mode (E-mode) of operation. The fabricated FinFETs also exhibit highly-improved off-state performance with minimised short-channel effects (SCE) as a result of the enhanced gate control. A very high on/off current ratio of 108 and a sub-threshold swing of 75 mV/decade are recorded by the E-mode devices with a threshold voltage of +0.2 V, showing substantial potential for high speed logic, mixed-signal and power electronics applications.