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GaN-based E-band power amplifier modules

 
: Schwantuschke, D.; Henneberger, R.; Wagner, S.; Tessmann, A.; Kallfass, I.; Brueckner, P.; Quay, R.; Ambacher, O.

European Microwave Association:
46th European Microwave Conference, EuMC 2016. Proceedings : 4-6 October 2016, London, UK, European Microwave Week (EuMW) 2016
London: Horizon House, 2016
ISBN: 978-2-87487-043-9
4 S.
European Microwave Conference (EuMC) <46, 2016, London>
European Microwave Week (EuMW) <19, 2016, London>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
E-band power amplifier; power amplifier module; monolithic microwave integrated circuits (MMICs); aluminum gallium nitride

Abstract
This work discusses the fabrication of two GaNbased power amplifier modules, suitable to increase the available output power levels of E-band multi-Gigabit fixed wireless links dedicated to aeronautics and space applications. The first mounted module contains one GaN-based power amplifier MMIC, packaged in a WR-10 waveguide environment. The module shows a small-signal gain of 13.4 dB with a gain flatness of ± 1 dB, along with a saturated output power of more than 26 dBm (400 mW) for the entire intended frequency range between 71-76 GHz. The second module, parallelizing four MMICs, demonstrates a high saturated output power of more than 31.1 dBm (1290 mW), along with a small-signal gain of typically 11.2 dB and a flatness of ±1 dB within the frequency range of interest.

: http://publica.fraunhofer.de/dokumente/N-423577.html