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HIPIMS in full face erosion circular cathode for semiconductor applications

: Bellido-Gonzalez, V.; Papa, F.; Azzopardi, A.; Brindley, J.; Li, H.; Vetushka, A.; Kroehnert, K.; Ehrmann, O.; Lang, K.-D.; Mackowiak, P.; Fernandez, I.; Wennberg, A.; Ngo, H.D.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 17th Electronics Packaging and Technology Conference, EPTC 2015 : 2-4 December 2015, Singapore
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-7270-1 (Print)
ISBN: 978-1-4673-7268-8
Electronics Packaging and Technology Conference (EPTC) <17, 2015, Singapore>
Fraunhofer IZM ()

One of the great hopes for HIPIMS applications was their potential use and adoption by the semiconductor industry. Production of highly ionized particles has been of interest for deep in-trench filling as ionized particles can be directed by an electric field down the deep trench. However the technological reality is that the semiconductor industry has not been enthusiastic about this approach. The established technologies exist for a good reason and any new technology has to be proven beyond a doubt before being adopted. With regards to magnetron sputtering for semiconductor applications, the market is clearly dominated by circular sources where the magnetic field trap rotates in order to produce a clean target (Full Face Erosion, or FFE) as well as to maintain properties such as the uniformity and fill coverage from bump to valley. There are several interesting phenomena taking place when a moving plasma and a high power pulsed plasma are combined.