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High frequency characterization of silicon substrate and through silicon vias

: Duan, X.; Boettcher, M.; Dahl, D.; Schuster, C.; Tschoban, C.; Ndip, I.; Lang, K.-D.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 66th Electronic Components and Technology Conference, ECTC 2016. Proceedings : 31 May-3 June 2016, Las Vegas, Nevada, USA
Los Alamitos, Calif.: IEEE Computer Society Conference Publishing Services (CPS), 2016
ISBN: 978-1-5090-1205-3 (Print)
ISBN: 978-1-5090-1204-6 (Online)
ISBN: 978-1-5090-1203-9
Electronic Components and Technology Conference (ECTC) <66, 2016, Las Vegas/Nev.>
Fraunhofer IZM ()

In this work, we present the high frequency extraction of electrical material properties of silicon substrates. Two methods, including the substrate integrated waveguide (SIW) based method and the planar resonator based method, are used and their consistency will be shown. For the SIW-based method, a line difference algorithm is applied for the calculation of a broadband material property with the effective width of the SIW determined experimentally. For the planar resonator based method, the material parameters are extracted at discrete resonance frequencies by comparing to full-wave simulations. The results from both methods are compared to each other and discussed with respect to their accuracy and their suitability for different substrate types. For the validation purpose, TSV transitions are designed and fabricated on the same wafers of SIWs and planar resonators, which are modelled using a full-wave electromagnetic solver together with the extracted electrical properties of the silicon wafer.