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Silicon interposer interconnect structures analysis - 3D full wave simulations and measurements

: Scogna, A.C.; Kostka, D.; Troescher, M.; Steinhardt, A.; Trieb, R.; Heinig, A.; Henkel, A.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electromagnetic Compatibility Society:
IEEE International Symposium on Electromagnetic Compatibility, EMC 2016 : 25-29 July 2016, Ottawa, Canada; Proceedings
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1442-2
ISBN: 978-1-5090-1443-9
ISBN: 978-1-5090-1441-5
ISBN: 978-1-5090-1439-2
International Symposium on Electromagnetic Compatibility (EMC) <2016, Ottawa>
Fraunhofer IIS, Institutsteil Entwurfsautomatisierung (EAS) ()

The goal of this work is to electrically model TSVs and 3D interposer interconnects by means of three dimensional (3D) full wave electromagnetic simulations and a circuit like approach for a very fast simulation. The full wave simulations provide a comprehensive and systematic analysis of various parameters of the structure. The circuit like approach provides an analysis opportunity to determine some practical limits of the length of interconnect structures which can be integrated as design rules during the (silicon) interposer design process. Modeling guidelines for the 3D full wave simulation are provided in order to address two of the main concerns: speed and accuracy. Parametric study is also performed in order to explore the impact of design parameters on the electrical performance.