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Fundamental efficiency limits in power electronic systems

: Heckel, T.; Rettner, C.; März, M.


IEEE Power Electronics Society:
INTELEC 2015, Osaka. Proceedings : October 18-October 22, 2015, Swissôtel Nankai Osaka, Nankai, Osaka, Japan
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-6582-3
ISBN: 978-1-4799-6581-6
ISBN: 978-1-4799-6583-0
6 S.
International Telecommunications Energy Conference (INTELEC) <37, 2015, Osaka>
Fraunhofer IISB ()

In this paper, the efficiency limits of power electronic converters are investigated from a semiconductor point of view. The approach is presented on the example of a hard switching half bridge while taking Si, SiC and GaN devices into account. Beside parasitic effects of the semiconductors itself, further converter non-idealities and limits from a thermal point of view are discussed. All in all, the obtained results act as a design guideline and allow for an easy comparison of different semiconductor technologies.