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RF-MEMS Technology for 5G: Series and Shunt Attenuator Modules Demonstrated up to 110 GHz

: Iannacci, J.; Huhn, M.; Tschoban, C.; Pötter, H.


IEEE Electron Device Letters 37 (2016), Nr.10, S.1336-1339
ISSN: 0741-3106
ISSN: 0193-8576
Fraunhofer IZM ()

RF-MEMS technology is emerging as a key enabling solution to address demanding requirements that upcoming 5G standards pose upon passive devices and networks. In this work, we demonstrate experimentally-to the best of our knowledge, for the first time-, RF-MEMS 2-state basic attenuator modules, from nearly-DC up to 110 GHz. Physical samples are realized in the CMM-FBK RF-MEMS technology, and design variations are tested. Resistive loads are placed in series or shunt configuration on the RF line, and the attenuation is ON/OFF switched by electrostatically driven MEMS micro-relays. Tested devices show attenuation levels (S21) from-5 dB to-10 dB, depending on the resistive load, with flatness of 2-3 dB from 10 MHz to 50 GHz and of around 2 dB from 60 GHz up to 110 GHz. When OFF, the attenuator modules introduce loss (S21) better than-1 dB up to 50 GHz and better than-6 dB up to 110 GHz.