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Heavy copper wire-bonding on silicon chips with aluminum-passivated Cu bond-pads

: Gross, David; Haag, S.; Reinold, M.; Schneider-Ramelow, M.; Lang, K.-D.


Microelectronic engineering 156 (2016), S.41-45
ISSN: 0167-9317
Fraunhofer IZM ()

Thick electroplated Cu bond-pads have recently been shown to allow for heavy Cu wire-bonding on silicon power devices. The Cu surface oxides present on these pads are a major concern for the bonding process and for a sufficiently stable bond formation. They currently have to be removed after the die-attach and prior to wire-bonding. To avoid such removal, the application of a thin Al coating on the Cu bond-pads is investigated for its passivating ability and its suitability for the bonding process.