Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Simulation of silicon-dot-based single-electron memory devices

 
: Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen

:
Postprint urn:nbn:de:0011-n-4213199 (630 KByte PDF)
MD5 Fingerprint: 317be83922c300edacc4380e42276e0c
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 3.5.2019


Bär, E. ; Institute of Electrical and Electronics Engineers -IEEE-; Deutsche Forschungsgemeinschaft -DFG-, Bonn:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 : September 6-8, 2016, Nuremberg, Germany
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0818-6 (Online)
ISBN: 978-1-5090-0816-2 (CD-ROM)
ISBN: 978-1-5090-0819-3
ISBN: 978-1-5090-0817-9
S.237-240
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2016, Nuremberg>
European Commission EC
H2020; 688072; IONS4SET
Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
Quantum Dot; single electron memory; numerical simulation; tunneling rate; charge state

Abstract
Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding the nextnano++ simulator was employed. Tunneling rates between the dot and other electrodes were calculated using a post-processing of the electron-state-specific wave functions on the dots and in the electrical contacts. The charge state of the dots was evaluated using the master equation approach. The simulation model was verified by a comparison of simulated and measured charge state life times in a prototype of a single-electron memory device.

: http://publica.fraunhofer.de/dokumente/N-421319.html