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Empirical cluster modeling revisited

Empirische Clustermodellierung neu betrachtet
: Pichler, Peter

Postprint urn:nbn:de:0011-n-4212089 (575 KByte PDF)
MD5 Fingerprint: 187beca33700e8b1d1a1ced75a00248d
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Erstellt am: 10.11.2016

Bär, E. ; Institute of Electrical and Electronics Engineers -IEEE-; Deutsche Forschungsgemeinschaft -DFG-, Bonn:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 : September 6-8, 2016, Nuremberg, Germany
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0818-6 (Online)
ISBN: 978-1-5090-0816-2 (CD-ROM)
ISBN: 978-1-5090-0819-3
ISBN: 978-1-5090-0817-9
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2016, Nuremberg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
impurity clustering; empirical models; arsenic; silicon; solubility; process simulation; TCAD

Impurities being present in a semiconductor in high concentrations may form agglomerates. Agglomeration usually demobilizes the impurities and, in case of dopants, also renders them electrically inactive. A standard approach in continuum process simulation assumes the formation of energetically favorable small clusters of size m. High numbers of m are used to mimic an often desired saturation of the concentration of unclustered impurity atoms with increasing total concentration. However, for systems far from equilibrium, potentiated high concentrations may lead to numerical problems. In this work, an alternative formulation is presented which features a saturation of the unclustered impurity concentration while introducing only one equation derived from Waite's theory of diffusion-limited reactions.