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Control of direct bonding behavior by interlayers

: Eichler, M.; Dillmann, H.; Nagel, K.; Klages, C.-P.


Suga, T. ; Electrochemical Society -ECS-:
Semiconductor Wafer Bonding: Science, Technology and Applications 14 : PRiME 2016/230th ECS Meeting, October 2, 2016 - October 7, 2016, Honolulu, Hawaii
Pennington, NJ: ECS, 2016 (ECS transactions 75.2016, Nr.9)
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) <2016, Honolulu/Hawaii>
Electrochemical Society (Meeting) <230, 2016, Honolulu/Hawaii>
International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications <14, 2016, Honolulu/Hawaii>
Fraunhofer IST ()

Atmospheric pressure plasma treatments were used to control free surface energy of different areas on silicon wafers before bonding. Surface energy measurements in situ during annealing for this different areas are presented for SF6 etching as well as acetylene, glycidyl methacrylate, tetramethylsilane and C4F8 and coatings. The bonding energy can be permanently reduced by appropriate coatings or surface roughness. The results revel important aspects for the choice of precursors and parameters to obtain high contrast between the treated and untreated areas.