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Monolithic 3D TSV-based high-voltage, high-temperature capacitors

: Gruenler, S.; Rattmann, G.; Erlbacher, T.; Bauer, A.J.; Frey, L.


Microelectronic engineering 156 (2016), S.19-23
ISSN: 0167-9317
Materials for Advanced Metallization Conference (MAM) <2015, Grenoble>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IISB ()

In this work, high-voltage monolithic 3D capacitors operating at 100 V (6 MV/cm) are fabricated by the use of a through silicon-via-based technology. Electric characteristics of the monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of the planar capacitors with an equal contact area and identical dielectric thicknesses. The impact of the 3D architecture of capacitors on their electrical properties is studied for various patterns and geometries. TSV-based capacitors with a hexagonal arrangement of the holes and 20 μm hole diameters exhibit a capacitance deviation of 0.8% at 150 °C in accumulation, justifying the capability of TSV-based capacitors to operate even at high-temperatures. Furthermore, a high dielectric-breakdown voltage of 280 V (18 MV/cm) was realized using a thick hybrid dielectric stack of SiO2/Si3N4.