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Theoretical investigation of in situ k-restore processes for damaged ultra-low-k materials

: Förster, A.; Wagner, C.; Schuster, J.; Gemming, S.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 : 18-21 May 2015, Grenoble
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-7356-2
International Interconnect Technology Conference (IITC) <2015, Grenoble>
Materials for Advanced Metallization Conference (MAM) <2015, Grenoble>
Fraunhofer ENAS ()

Ultra-low-k (ULK) materials are essential for today's production of integrated circuits (ICs). However, during the manufacturing process the ULK's low dielectric constant (k-value) increases due to the replacement of hydrophobic species with hydrophilic groups. We investigate the use of plasma enhanced fragmented silylation precursors to repair this damage. For this task the fragmentation of the silylation precursors OMCTS and DMADMS and their possible repair reactions are studied using density functional theory (DFT) and molecular dynamics (MD) simulations.