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A novel charge based SPICE model for nonlinear device capacitances

: Heckel, T.; Frey, L.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 : Blacksburg, Virginia, USA, November 2-4, 2015
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-7885-7
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <3, 2015, Blacksburg/Va.>
Fraunhofer IISB ()

Modeling of parasitic semiconductor device capacitances has always been a difficult task due to their nonlinearities. In this paper, we present a novel charge based model which provides simplification and ease of the modeling process. Further-more, convergence errors are reduced and the simulation speed is enhanced by up to a factor of two compared to state of the art models. This is especially important for novel SiC and GaN devices which allow for increased switching frequencies and thus a higher number of switching cycles per time period. Moreover, the presented modeling approach can easily be automated which is a significant advantage compared to state of the art models consisting of arbitrary mathematical equations.